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FDS9431A - P-Channel MOSFET

Description

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance.

DC/DC converte

Features

  • -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
  • Fast switching speed.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability. D D 5 D D 6 7 G SS 8 SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (N.

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Datasheet Details

Part number FDS9431A
Manufacturer onsemi
File Size 177.25 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS9431A Datasheet
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Full PDF Text Transcription

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FDS9431A September 1999 FDS9431A P-Channel 2.5V Specified MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance. Applications • DC/DC converter • Power management • Load switch • Battery protection Features • -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. • Fast switching speed. • High density cell design for extremely low RDS(ON). • High power and current handling capability.
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